| Biography | |
|---|---|
 Prof. Wen Huang Hefei University of Technology, China |
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| Title: Monolithic High Power Density Passive Devices based on Self-rolled-up Membrane Nanotechnology Platform | |
| Abstract: Obtaining monolithic high power density passive devices is a topic of broad interest for a wide range of science and engineering applications, especially for power electronics. Devices such as power inductors and capacitors are usually the very basic but key components in complex systems. Taking power inductor as an example, just the off-chip applications require ~ 400 billion units/year by 2020 in almost all electronics areas according to Mordor Intelligence database. Any innovation of power inductor design could lead to huge impact on the entire power electronics industry. However, contrary to the current trend of highly integrated systems, the state-of-art technological innovations on design and manufacture of high power density passive devices are mostly still on the macro scale. Advanced nanotechnologies, which enabled the aggressive scaling of CMOS transistors for logic circuits, have not been taken advantage of for high power density on chip. This is because the planar and serial nature of the CMOS process flows stand in contrary to the optimum design principle of 3D magnetic induction system on the macro scale. Strain-induced self-rolled-up nanomembrane (S-RuM) nanotechnology, on the other hand, has been proposed as a new platform for forming 3D on-chip coils for passive electronics applications, with extremely small footprint and exceptional integration capabilities. The “processes in 2D but functions in 3D” manufacturing flow of the S-RuM platform allows planar processing compatible processing for manufacturing. In this talk, a comprehensive review of S-RuM platform will be presented and previously demonstrated high power density S-RuM devices will be shown, which provides a universal platform for the miniaturization and integration of passive electronic components for high density power electronics applications, to address the ever-present and increasingly-urgent need to reduce size, weight, cost while improving performance of power electronic devices and systems. | |
| Biography: Prof. Wen Huang received his B.En. degree in electronic engineering from the University of Electronic Science and Technology of China, Chengdu, China, in 2005, and the M.S. and Ph.D. degrees in electrical and computer engineering from the University of Illinois at Urbana-Champaign, Urbana, U.S.A., in 2014 and 2017, respectively. He was a postdoctoral research associate in the Micro and Nanotechnology Laboratory at the University of Illinois at Urbana-Champaign, Urbana, U.S.A. from 2017 to 2018. He is now a Huangshan Scholar Distinguished Professor of Microelectronics Engineering and the founding Director of Soft Membrane Electronics Technology Laboratory with the Hefei University of Technology, Hefei, China, where he leads research in the development of Nano-Microwave and Nano-Power devices based on advanced nanotechnology. He has published over 40 scientific papers in high impact journals such as Science, Nature Electronics, Nature Materials, Science Advances, etc. and holds 7 U.S. patents. He is a senior member of the IEEE. His current research interests include monolithic 3-D RF/Power passive electronics based on self-rolled-up membrane nanotechnology, soft RF electronics, 2-D material-based RF/Power electronics, THz technologies, and SAW filters for wireless communication as well as advanced semiconductor processing technology. | |
